? semiconductor components industries, llc, 2012 september, 2012 ? rev. 0 1 publication order number: ngtb25n120flw/d NGTB25N120FLWG igbt this insulated gate bipolar transistor (igbt) features a robust and cost effective trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. the igbt is well suited for ups and solar applications. incorporated into the device is a soft and fast co ? packaged free wheeling diode with a low forward voltage. features ? low saturation voltage using trench with field stop technology ? low switching loss reduces system power dissipation ? 10 s short circuit capability ? low gate charge ? soft, fast free wheeling diode ? these are pb ? free devices typical applications ? solar inverter ? ups inverter absolute maximum ratings rating symbol value unit collector ? emitter voltage v ces 1200 v collector current @ t c = 25 c @ t c = 100 c i c 50 25 a pulsed collector current, t pulse limited by t jmax i cm 200 a diode forward current @ t c = 25 c @ t c = 100 c i f 50 25 a diode pulsed current, t pulse limited by t jmax i fm 200 a gate ? emitter voltage v ge 20 v power dissipation @ t c = 25 c @ t c = 100 c p d 192 77 w short circuit withstand time v ge = 15 v, v ce = 500 v, t j 150 c t sc 10 s operating junction temperature range t j ? 55 to +150 c storage temperature range t stg ? 55 to +150 c lead temperature for soldering, 1/8? from case for 5 seconds(note 3) t sld 260 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. to ? 247 case 340l style 4 c g 25 a, 1200 v v cesat = 2.0 v e off = 0.95 mj e device package shipping ordering information NGTB25N120FLWG to ? 247 (pb ? free) 30 units / rail http://onsemi.com a = assembly location y = year ww = work week g = pb ? free package marking diagram 25n120fl aywwg g e c
NGTB25N120FLWG http://onsemi.com 2 thermal characteristics rating symbol value unit thermal resistance junction ? to ? case, for igbt r jc 0.65 c/w thermal resistance junction ? to ? case, for diode r jc 1.5 c/w thermal resistance junction ? to ? ambient r ja 40 c/w electrical characteristics (t j = 25 c unless otherwise specified) parameter test conditions symbol min typ max unit static characteristic collector ? emitter breakdown voltage, gate ? emitter short ? circuited v ge = 0 v, i c = 500 a v (br)ces 1200 ? ? v collector ? emitter saturation voltage v ge = 15 v, i c = 25 a v ge = 15 v, i c = 25 a, t j = 150 c v cesat 1.55 ? 2.0 2.2 2.2 ? v gate ? emitter threshold voltage v ge = v ce , i c = 250 a v ge(th) 4.5 5.5 6.5 v collector ? emitter cut ? off current, gate ? emitter short ? circuited v ge = 0 v, v ce = 1200 v v ge = 0 v, v ce = 1200 v, t j = 150 c i ces ? ? ? ? 0.5 2 ma gate leakage current, collector ? emitter short ? circuited v ge = 20 v , v ce = 0 v i ges ? ? 100 na dynamic characteristic input capacitance v ce = 20 v, v ge = 0 v, f = 1 mhz c ies ? 5200 ? pf output capacitance c oes ? 144 ? reverse transfer capacitance c res ? 94 ? gate charge total v ce = 600 v, i c = 25 a, v ge = 15 v q g 220 nc gate to emitter charge q ge 40 gate to collector charge q gc 98 switching characteristic, inductive load turn ? on delay time t j = 25 c v cc = 600 v, i c = 25 a r g = 10 v ge = 0 v/ 15v t d(on) 91 ns rise time t r 26 turn ? off delay time t d(off) 228 fall time t f 160 turn ? on switching loss e on 1.50 mj turn ? off switching loss e off 0.95 total switching loss e ts 2.45 turn ? on delay time t j = 125 c v cc = 600 v, i c = 25 a r g = 10 v ge = 0 v/ 15v t d(on) 88 ns rise time t r 28 turn ? off delay time t d(off) 240 fall time t f 270 turn ? on switching loss e on 1.8 mj turn ? off switching loss e off 1.6 total switching loss e ts 3.4
NGTB25N120FLWG http://onsemi.com 3 electrical characteristics (t j = 25 c unless otherwise specified) parameter unit max typ min symbol test conditions diode characteristic forward voltage v ge = 0 v, i f = 25 a v ge = 0 v, i f = 25 a, t j = 150 c v f 2.2 2.5 2.8 v reverse recovery time t j = 25 c i f = 25 a, v r = 400 v di f /dt = 200 a/ s t rr 240 ns reverse recovery charge q rr 1.5 c reverse recovery current i rrm 15 a reverse recovery time t j = 125 c i f = 25 a, v r = 400 v di f /dt = 200 a/ s t rr 260 ns reverse recovery charge q rr 2.0 c reverse recovery current i rrm 19 a
NGTB25N120FLWG http://onsemi.com 4 typical characteristics figure 1. output characteristics figure 2. output characteristics v ce , collector ? emitter voltage (v) v ce , collector ? emitter voltage (v) 5 4 3 2 1 0 300 figure 3. output characteristics figure 4. typical transfer characteristics v ce , collector ? emitter voltage (v) v ge , gate ? emitter voltage (v) figure 5. typical capacitance figure 6. diode forward characteristics v ce , collector ? emitter voltage (v) v f , forward voltage (v) 175 150 125 100 75 50 25 0 10 100 1000 10,000 3.0 2.5 2.0 1.5 1.0 0.5 0 0 20 40 60 80 120 i c , collector current (a) i c , collector current (a) capacitance (pf) i f , forward current (a) v ge = 20 to 15 v t j = 25 c 11 v 9 v 8 v 7 v i c , collector current (a) t j = 150 c i c , collector current (a) t j = ? 40 c t j = 25 c t j = 150 c 200 100 t j = 25 c t j = 125 c 13 v 7 v c ies c oes c res 250 200 150 100 50 0 67 8 10 v 11 v 9 v 8 v 7 v 10 v v ge = 20 to 15 v 300 250 200 150 100 50 0 5 4 3 2 1 0678 13 v v ge = 20 to 15 v 5 4 3 2 1 0 300 250 200 150 100 50 0 678 13 v 11 v 9 v 8 v 10 v 8 4 01216 200 0 175 150 125 100 75 50 25 3.5 4.0 5.5 4.5 5.0
NGTB25N120FLWG http://onsemi.com 5 typical characteristics figure 7. typical gate charge figure 8. energy loss vs. temperature q g , gate charge (nc) t j , junction temperature ( c) 150 100 50 0 16 figure 9. switching time vs. temperature figure 10. energy loss vs. i c t j , junction temperature ( c) i c , collector current (a) 140 120 100 80 60 40 20 0 1 10 100 1000 8 4 figure 11. switching time vs. i c figure 12. energy loss vs. rg i c , collector current (a) rg, gate resistor ( ) 8 1 10 100 1000 75 65 55 45 35 25 15 5 5.0 v ge , gate ? emitter voltage (v) switching loss (mj) switching time (ns) switching loss (mj) switching time (ns) switching loss (mj) 250 v ce = 600 v v ge = 15 v i c = 25 a rg = 10 v ce = 600 v 160 v ce = 600 v v ge = 15 v i c = 25 a rg = 10 t f t d(off) v ce = 600 v v ge = 15 v t j = 150 c rg = 10 v ce = 600 v v ge = 15 v t j = 150 c rg = 10 t f t d(off) v ce = 600 v v ge = 15 v i c = 25 a t j = 150 c 85 200 2.5 0 20 40 60 80 100 120 140 160 e on e off t d(on) t r 12 16 20 24 28 32 36 40 44 48 52 e on e off t d(on) t r 12 16 20 24 28 32 36 40 44 48 52 e on e off 2 1.5 1 0.5 0 3.5 3 2.5 2 1.5 1 0.5 0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 12 8 4 0 300 350
NGTB25N120FLWG http://onsemi.com 6 typical characteristics figure 13. switching time vs. rg figure 14. energy loss vs. v ce rg, gate resistor ( ) v ce , collector ? emitter voltage (v) 75 65 55 45 35 25 15 5 10 100 1000 10,000 725 675 625 575 525 475 425 375 3.5 figure 15. switching time vs. v ce figure 16. safe operating area v ce , collector ? emitter voltage (v) v ce , collector ? emitter voltage (v) 725 675 625 575 525 475 425 375 1 10 100 1000 figure 17. reverse bias safe operating area v ce , collector ? emitter voltage (v) switching time (ns) switching loss (mj) switching time (ns) i c , collector current (a) i c , collector current (a) 85 v ce = 600 v v ge = 15 v i c = 25 a t j = 150 c 775 v ge = 15 v i c = 25 a rg = 10 t j = 150 c 775 t f t d(off) v ge = 15 v i c = 25 a rg = 10 t j = 150 c t f t d(off) t d(on) t r e on e off 1 t d(on) t r 3 2.5 2 1.5 1 0.5 0 1000 100 10 1 0.01 0.1 1 10 100 1000 50 s 100 s 1 ms dc operation single nonrepetitive pulse t c = 25 c curves must be derated linearly with increase in temperature 1000 100 10 1 1 10 100 1000 v ge = 15 v, t c = 125 c
NGTB25N120FLWG http://onsemi.com 7 typical characteristics figure 18. igbt transient thermal impedance pulse time (sec) thermal response (z jc ) figure 19. diode transient thermal impedance pulse time (sec) thermal response (z jc ) 0.001 0.01 0.1 1 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 50% duty cycle 20% 10% 5% 2% 1% single pulse r jc = 0.65 junction case c 1 c 2 r 1 r 2 r n c i = i /r i duty factor = t 1 /t 2 peak t j = p dm x z jc + t c c n i (sec) 1.0e ? 4 1.76e ? 4 0.002 0.1 2.0 r i ( c/w) 0.02659 0.06231 0.10246 0.2121 0.1057 1000 100 10 0.1 0.01 0.001 0.0001 0.000001 0.001 0.1 1 10 1 0.00001 50% duty cycle 20% 10% 5% 2% 1% single pulse r jc = 1.5 0.01 junction c 1 c 2 r 1 r 2 c i = i /r i duty factor = t 1 /t 2 peak t j = p dm x z jc + t c r i ( c/w) i (sec) 1.48e ? 4 0.002 0.03 0.19655 0.414 0.5 case c n r n 0.1 2.0 0.345 0.0934 figure 20. test circuit for switching characteristics
NGTB25N120FLWG http://onsemi.com 8 figure 21. definition of turn on waveform
NGTB25N120FLWG http://onsemi.com 9 figure 22. definition of turn off waveform
NGTB25N120FLWG http://onsemi.com 10 package dimensions to ? 247 case 340l ? 02 issue f n p a k w f d g u e 0.25 (0.010) m yq s j h c 4 123 ? t ? ? b ? ? y ? notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. 2 pl 3 pl 0.63 (0.025) m tb m ? q ? l dim min max min max inches millimeters a 20.32 21.08 0.800 8.30 b 15.75 16.26 0.620 0.640 c 4.70 5.30 0.185 0.209 d 1.00 1.40 0.040 0.055 e 1.90 2.60 0.075 0.102 f 1.65 2.13 0.065 0.084 g 5.45 bsc 0.215 bsc h 1.50 2.49 0.059 0.098 j 0.40 0.80 0.016 0.031 k 19.81 20.83 0.780 0.820 l 5.40 6.20 0.212 0.244 n 4.32 5.49 0.170 0.216 p --- 4.50 --- 0.177 q 3.55 3.65 0.140 0.144 u 6.15 bsc 0.242 bsc w 2.87 3.12 0.113 0.123 style 4: pin 1. gate 2. collector 3. emitter 4. collector on semiconductor and are registered trademarks of semiconductor co mponents industries, llc (scillc). scillc owns the rights to a numb er of patents, trademarks, copyrights, trade secrets, and other intellectual property. a list ing of scillc?s product/patent coverage may be accessed at ww w.onsemi.com/site/pdf/patent ? marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. all operating parame ters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or a uthorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in whic h the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or us e scillc products for any such unintended or unauthorized appli cation, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unin tended or unauthorized use, even if such claim alleges that scil lc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyrig ht laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 ngtb25n120flw/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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